Abstract
We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current–voltage characteristics of devices based on InAs/Al x Ga 1− x AsSb/Al 0.1Ga 0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T=77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.
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