Abstract
The relevance of charge pumping (CP) measurements for addressing reliability issues is investigated. This analysis points to the formation of defects in the interfacial SiO2 layer induced by the high-k film and enhanced when increasing the high-k thickness or the temperature anneal. Then, combined with stress under substrate injection regime, CP reveals a generation of defects within the interfacial layer (IL) that could support TDDB results which suggest a breakdown initiated in the IL. Nevertheless, as far as high-k traps are involved, like in PBTI, CP turns out to be insufficient because of its probing depth limitation.
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