Contribution to the 1/f noise analysis in a bi-dimensional electron gas

Abstract

The 1/f noise is investigated in an epitaxial AlGaAs/GaAs/AlGaAs heterostructure in the temperature range of [4–300 K]. The sample is biased at very low voltage to avoid velocity saturation at low temperature. Hooge parameters are determined at very low frequency assuming the absence of correlation between existing noise sources. These parameters are weakly fluctuating but do not show clear variation with temperature; αH varies in the range of 10−5 to 10−2, which are higher than theoretical values based on the mobility fluctuations. γ remains close to unity. αH and γ values suggest that the 1/f noise originates from the mobility fluctuation due to the lattice scattering, but the difference between theoretical and experimental αH suggests the existence of the noise originating from electron number fluctuations.