Abstract
Boron-10 (10B) is present in a large number of memory and logic devices below 65 nm through contamination during fabrication process, and the reaction of low-energy cosmic neutrons with high concentrations of 10B in the device contributes to the soft error rate (SER). Based on the experiments at Institut Laue–Langevin facility, the thermal neutron contribution of three devices (one static random access memory, one field-programmable gate array, and one microprocessor) is investigated for both ground level and aircraft environments. We conclude that the thermal neutron-induced single event upsets could have a similar contribution to SER as the high-energy part in atmospheric applications.
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