Abstract
A new simple and cheap method to grow large scale SiC-SiO2 nanocables on catalyzed Si substrate directly is presented. The method is based on the thermal decomposition of methanol. The grown nanocables consisted of crystalline 3C-SiC and amorphous SiO2. A simple etching and oxidation process was used to analyze the contribution of SiC and SiO2 components to photoluminescence.
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