Abstract
The finite-size effects of the electron-acoustic phonon of the deformation-potential interaction in semiconductor heterostructures are studied. Modification of the interaction originates from the phonon induced changes of the interface spacing and electron effective mass. Calculations of the electron mobility for a quantum well (QW) show that for narrow GaAs-based QWs, the contribution of the additional mechanisms to the intrasubband scattering depends on the sign of the deformation potential constant and can exceed that from the usual deformation potential.
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