Abstract
The dislocation distribution effect on the carrier concentration distribution at a depth of 0.3 μm in a Si-implanted layer has been investigated by means of the Lang X-ray topograph technique and by means of the capacitance-voltage ( C- V) method using a 200 μm diameter Schottky diode array. In the range of dislocation density < 10 6–10 7 cm −2, there is no direct relationship between the 0.3 μm depth carrier concentration and dislocation density in a semi-insulating GaAs substrate obtained from a liquid-encapsulated Czochralski-grown crystal boule.
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