Abstract
At present, two kinds of activation techniques for preparing GaAs NEA photocathode are available. In this paper, according to two kinds of photocurrent curve arising in the activation, the characteristic and mechanism of the two kinds of craft were summed up and compared with each other, and the further theoretical investigation on the mechanism of activation was carried out based on the recent research of NEA surface model for GaAs photocathode. It is proposed as a process principle that during (Cs, O) alternation phase of the activation process of GaAs photocathode, Cs should always be in excessive state. Besides, it is also indicated that whether Cs is excessive during (Cs, O) alternation phase and the Cs/O ratio may affect directly the final property of photocathode. Finally, a method to modify the craft parameters to guard against the deviation from the principle is presented. The presented study is very necessary and significative for optimizing the activation techniques so as to enhance the performances of GaAs NEA photocathodes.
Published Version
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