Abstract
A simple and novel technique has been developed for patterning sub-micron metal pillars by means of contrast enhancement lithography. The technique allows one to obtain either (i) a straight sidewall profile, or (ii) a negatively sloped profile with a slight overhang, of photoresist features by changing processing conditions. These characteristic features of the technique make it viable for both subtractive RIE as well as lift-off patterning of metal. Results towards its applications to define metal pillars, by using metal lift-off or reactive ion etching, for multilevel metal interconnections are presented. The issues of surface reflectivity, topography, control of sidewall profile and feature dimensions are addressed.
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