Abstract
With pumping by a Ti:sapphire laser, the cw laser characteristic of a 5.6 at. %, 0.5 mm thick Nd3+:LaB3O6 cleavage microchip in an end-pumped plano-plano resonator is researched. A slope efficiency of up to 49% and a maximum output power of 530 mW are obtained at an absorbed pump power of 1.16 W and an optimal output coupler transmission of 3.2%. Choppers with different duty cycles are used to change the thermal effects in the microchip, and the influences of thermal effects on the laser characteristics of the Nd3+:LaB3O6 cleavage microchip are investigated.
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