Continuous room-temperature multiple-quantum-well AlxGa1−xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition

Abstract

Room-temperature (∼26 °C) continous operation of AlxGa1−xAs-GaAs multiple-quantum-well injection lasers has been achieved. These devices are grown by metalorganic chemical vapor deposition and employ active regions consisting of six GaAs quantum wells having a thickness Lz∼120 Å separated by five Al0.30Ga0.70As barriers also ∼120 Å thick. These laser diodes operate on LO-phonon-assisted confined-particle transitions and exhibit low threshold current densities (Jth∼1660 A/cm2) and high total external differential quantum efficiencies (ηext∼85%).