Abstract
Thin-film Mg/Si(111) Schottky diodes are exposed to oxygen to detect chemicurrents in the devices. The detected charge is created by nonadiabatic energy dissipation and due to either internal exoemission currents or surface chemiluminescence induced photocurrents. Both contributions can be distinguished by changing the metal film thickness of the device. Auger electron spectroscopy to study the oxygen uptake demonstrates that the chemicurrent transients represent truly the time dependent reaction rate at the surface. Model calculations indicate that the current monitors Mg oxide island nucleation and growth.
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