Abstract
A technique for accurate measurement of the linear electro-optic coefficient(s) in crystals that are simultaneously optically active and birefringent is described. It is shown that this technique provides a direct method of measuring field-induced birefringence and so can form the basis of a Bi(12)SiO(20) (or Bi(12)GeO(20)) sensor arrangement. The high degree of accuracy obtained in the measurements of the linear electro-optic coefficient in Bi(12)SiO(20) and Bi(12)GeO(20) crystals indicates the particular suitability of these materials in electric-field and voltage-sensor systems with a high dynamic range and for possible waveguiding applications.
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