Abstract
A technique for accurate measurement of the linear electro-optic coefficient(s) in crystals that are simultaneously optically active and birefringent is described. It is shown that this technique provides a direct method of measuring field-induced birefringence, and so can form the basis of a BSO (or BGO) sensor arrangement. The high degree of accuracy obtained in the measurements of the linear electro-coefficient in Bi 12SiO 20 and Bi 12GeO 20 crystals indicates the particular suitability of these materials in electric field and voltage sensor systems with a high dynamic range, and for possible waveguiding applications.
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