Abstract
We demonstrate the fabrication of N-face GaN nanorods by metal organic vapourphase epitaxy (MOVPE), using continuous-flux conditions. This is in contrastto other approaches reported so far, which have been based on growth modesfar off the conventional growth regimes. For position control of nanorods anSiO2 masking layer with a dense hole pattern on ac-plane sapphire substrate was used. Nanorods with InGaN/GaNheterostructures have been grown catalyst-free. High growth rates up to25 µm h − 1 were observed and a well-adjusted carrier gas mixture between hydrogen and nitrogenenabled homogeneous nanorod diameters down to 220 nm with aspect ratios ofapproximately 8:1. The structural quality and defect progression within nanorods weredetermined by transmission electron microscopy (TEM). Different emission energies forInGaN quantum wells (QWs) could be assigned to different side facets by roomtemperature cathodoluminescence (CL) measurements.
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