Abstract
A contemporary apparatus with radiation (light) heating for growth of single crystals of refractory oxides and metals is described. To reduce the dissociation or evaporation of the melt or crystal components, the growth process was carried out in oxygen or an alternative gas at pressures up to 100 bar. The annealing system applied directly in the growth process at 1650 °C under O2 pressure and at temperatures up to 2500 °C under protective gas flow, allows the obtaining of large and perfect single crystals. Many single crystals of oxide materials, including incongruently melting substances, such as Y3Fe5O12, Gd3Fe5O12, BaFe12O19, SrFe12O19, BaFe12-x AlxO19, and many others have been grown, and much more could be grown.
Highlights
The light focused by mirrors was first used for growing single crystals of oxide and metallic materials in the work of Poplawsky [1] and Kooy [2]
Crystal growth of refractory oxides by the floating zone technique was introduced by Halden [3], O’Bryan [4], Fairholme [5], Field and Wagner [6], and Medvedev and Balbashov [7]
Okada [8] and Kitazawa [9] have reported an interesting construction of the apparatus for floating zone melting having a water-cooled metal reflector in the form of a full rotation ellipsoid and halogen or xenon arc lamp
Summary
The light focused by mirrors was first used for growing single crystals of oxide and metallic materials in the work of Poplawsky [1] and Kooy [2]. 1967), which proposed the construction of an optical furnace for growing single crystals with optical bi-ellipsoidal light concentrators with vertical directed axes, coinciding with the axis of single grown crystals of cylindrical shape (Figure 2) In this ideal optical circular distribution scheme, the falling on a cylindrical object of light energy with a high degree of axial symmetry in the heat field at a focal point takes place (Figure 2). Such energy distribution and temperature on the surface of a cylindrical rod leads to the high stability of thermal conditions on the interfaces of the melting and crystallization at crystals growth. Gd3 Fe5 O12 , the ferrites BaF12 O19 , SrFe12 O19 with different substitutions, (NiZn)Fe2 O4 , orthoferrites, high-quality rutile (TiO2 ), Rare Earth manganites, Fe-contained langasites, color sapphire, garnet of Al, Ga, and many other oxide compounds using this technique are presented
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