Abstract
A modified apparatus with radiation heating for growth of single crystals of refractory oxides is described. To reduce dissociation or evaporation of the melt or crystal components, the growth process was carried out under oxygen or an alternative gas with pressures as high as 100 atm. The crystals were annealed directly in the growth process at 1650°C under pressure, and at temperatures up to 2500°C under gas flow conditions. Many single crystals of oxides and their compounds, including incongruently melting substances such as Y 3Fe 5O 12, Gd 3Fe 5O 12, BaFe 12O 19, SrFe 12O 19, BaFe 12- x Al x O 19, etc. have been grown.
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