Abstract
We describe a heterodyne detection scheme for an optical measurement of the photocarrier lifetime in semiconductors. The setup utilizes the Doppler shift of a laser beam that is diffracted from a periodic modulation of the optical constants of a sample, when it is illuminated with a moving interference grating. The advantage of heterodyne detection is its high sensitivity and the extraction of phase information of the diffracted beam. We present measurements on amorphous hydrogenated silicon.
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