Abstract
A method for measuring the monomolecular recombination lifetime in amorphous semiconductors is described. The present method is based on the measurement of localized-state distributions from transient photoconductivity data and on the fitting of computer-generated photocurrent transients using the measured localized-state distributions to experimental data, by which the monomolecular recombination lifetime is determined. The present method is applied to the study of the iodine doping effects in amorphous arsenic triselenide, and it is found that the iodine doping does not change the localized-state distribution or monomolecular recombination lifetime.
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