Abstract
Energies of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys with 0 < x ≤ 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E0 transition shifts to longer wavelengths (∼50 meV/% of Bi), while the E0 + ΔSO transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
