Abstract
We demonstrate that the carrier density, scattering time, and wafer thickness of a doped Si wafer can be determined independently by measurement using a sub-THz spectroscopic system with an inexpensive continuous-wave multimode laser diode instead of a femtosecond laser. Because the THz signal spectrum of this system is almost discrete, we propose an improved algorithm for extracting these parameters from experimental data. We also demonstrate the two-dimensional imaging of the carrier-density distribution in the Si wafer.
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