Abstract
The electrical activation of dopants in the heavily doped GaAs layers of pulsed-laser-annealed AuGe/GaAs contacts were deduced and shown to be higher than that in bulk GaAs. The electrical activation is shown to decrease towards the GaAs surface and is used to explain the previously observed minimum in contact resistivity profiles in terms of arsenic loss during the laser annealing. These results will be shown to be consistent with observations of concentration-dependent activation in bulk GaAs.
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