Abstract
Au contacts were fabricated on Mg0.27Zn0.73O thin films that had been annealed by different processes. For the as-grown and vacuum annealed thin films, the Au/MgZnO contacts show ohmic behavior. For the thin film annealed in vacuum followed by in air, the contact shows current−voltage curve with Schottky characteristics and ultraviolet photo response at 0 V bias. This Schottky contact is attributed to the decrease of grain boundary density during vacuum annealing and the repair of defects during succedent annealing in air. At 5 V bias, the UV/visible (330 nm/440 nm) reject ratio of the Schottky detector reaches 4 orders of magnitude, obviously higher than the non-Schottky ones based on the as-grown MgZnO thin films and the vacuum annealed ones.
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