Abstract
Contact potential measurements by the Kelvin method were performed in vacuum on silicon wafers whose thermal oxide film was etched into the shape of a wedge. A given position along the oxide corresponded directly to a given depth and by scanning a reference electrode stripe across the wafer, information about the distribution of the oxide charge through the thickness was obtained. It was found that the oxide charge was positive and concentrated within a few hundred angstroms of the SiSiO 2 interface.
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