Abstract
We report the use of an F2 excimer laser at 157 nm for high-resolution photolithography. The excimer laser used was a commercially available system readily adapted for rapid contact reproduction of large-area masks. New mask technology based upon e-beam lithography on alkaline-earth halide substrates was developed to insure high transmittance in the VUV. Resolution better than 0.2 μm has been achieved.
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