Abstract
Pt contact on p-Si nanowires (NWs) using Ga-ion-induced depositionby a focused ion beam was formed with a specific contact resistance (ρc)of 1.54 × 10 − 6 Ω cm2. Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWsunderneath the Pt contact. A very low Schottky barrier height associated withinterface states raised from Pt-amorphized Si junction and with an imageforce induced by the applied bias can be implemented to elucidate ultralowρc. Thevalue of ρc lower than that of any known contact to Si NWs demonstrates a practical method forintegrating NWs in devices and circuits.
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