Abstract
The surface and interface qualities of liquid phase epitaxial layers strongly depend on the wetting between the melts and both the semiconductor and the crucible. The parameter representative for wetting is the contact angle of the melt with the solid. Contact angles of several melts and solids playing a role in the liquid phase epitaxy of binary, ternary and quaternary layers with compositions Ga x In 1- x As y P 1- y (0 ⩽ x, y ⩽ 1) matched to the InP lattice are presented for the first time. Contact angles of around 48° are found. An exception is only an In melt on GaInAs with an extremely small angle of around 20°. Graphite as a usual crucible material is more poorly wetted by the respective melts, deduced from contact angles aroung 146°. The contact angle decreases with increasing temperature, i.e. -1°/100 K for In on InP and -2.4°/100 K for In on graphite.
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