Construction of porous poly (aryl sulfide sulfone) film with low dielectric constant and excellent mechanical property

Abstract

AbstractThe low dielectric constant and excellent mechanical property polymer film plays important roles in the high‐speed integrated circuits. In this work, porous poly (aryl sulfide sulfone) (PASS) films with different pore regularities and distributions were systematically fabricated via a combination process with solvent evaporation, wet induced phase separation, and hot pressing. It is found that the macroporous structure of PASS films changed from irregular shape with large pore size distribution to regular shape with small pore size distribution and the sponge‐like pore structure disappeared then formed a dense layer by controlling the time of solvent evaporation and hot pressing, to realize the effective control of the pore structure. The optimal PASS porous film D3 which was heated for 25 min and then hot pressed for 4 min has a low dielectric constant (2.44) and dielectric loss (0.010), high tensile strength (62.14 MPa) and breakdown strength (139.32 kV/mm), and low water absorption (0.54%). The comprehensive excellent properties are beneficial to the application of PASS films in microelectronic devices.