Abstract
Silicon based optoelectronic integration is restricted by its poor optoelectronicproperties arising from the indirect band structure. Here, by combining silicon withanother promising optoelectronic material, the CdS nanoribbon (NR), devices withheterojunction structure were constructed. The CdS NRs were also doped withgallium to improve their n-type conductivity. A host of nano-optoelectronic devices,including light emitting diodes, photovoltaic devices, and photodetectors, weresuccessfully constructed on the basis of the CdS:Ga NR/Si heterojunctions. They allexhibited excellent device performances as regards high stability, high efficiency,and fast response speed. It is expected that the CdS NR/Si heterojunctions willhave great potential for future applications of Si based optoelectronic integration.
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