Abstract
Silicon based optoelectronic integration is restricted by its poor optoelectronicproperties arising from the indirect band structure. Here, by combining silicon withanother promising optoelectronic material, the CdS nanoribbon (NR), devices withheterojunction structure were constructed. The CdS NRs were also doped withgallium to improve their n-type conductivity. A host of nano-optoelectronic devices,including light emitting diodes, photovoltaic devices, and photodetectors, weresuccessfully constructed on the basis of the CdS:Ga NR/Si heterojunctions. They allexhibited excellent device performances as regards high stability, high efficiency,and fast response speed. It is expected that the CdS NR/Si heterojunctions willhave great potential for future applications of Si based optoelectronic integration.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
