Abstract
A parametric metal-oxide-silicon (MOS) electrometer, which offers the possibility of an electrometer with an input bias current lower, and an input resistance higher than any presently available has been constructed. The design of the electrometer permits the use of thicker silicon dioxide gate insulation than is possible with MOS field-effect-transistors (MOSFET) electrometers; thus reducing gate leakage currents. It also has a unique feedback configuration which eliminates any leakage current through the feedback loop. The electrometer is a solid-state analog of the vibrating-capacitor electrometer with MOS capacitors replacing the vibrating capacitor. The design and construction of a prototype which demonstrates the feasibility of the MOS electrometer is described.
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