Abstract
In order to utilize the longer wavelength light, the surface sulfurization of MoO3 was carried out. The photocurrent responses to typical 650, 808, 980, and 1064 nm light sources with Au gap electrodes were investigated. The results showed that the surface S-O exchange of MoO3 improved the interfacial charge transfer in the range of the broadband light spectrum. The S and O can be exchanged on the surface of MoO3 nanosheets under the hydrothermal condition, leading to the formation of a surface MoOx/MoS2 heterojunction. The interfacial interaction between the MoO3 nanosheets and MoS2 easily generated free electrons and holes, and it effectively avoided the recombination of photogenerated carriers. Meanwhile, the surface S-doping of MoO3 also resulted in the generation of an oxygen vacancy and sulfur vacancy on MoO3-xS2-y. The plasmonic characteristics of MoO3-x contributed to the enhancement of the interfacial charge transfer by photoexcitation. Otherwise, even with zero bias applied, a good photoelectric signal was still obtained with polyimide film substrates and carbon electrodes. This indicates that the formation of the heterojunction generates a strong built-in electric field that drives the photogenerated carrier transport, which can be self-powered. This study provides a simple and low-cost method for the surface functionalization of some metal oxides with a wide bandgap.
Published Version
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