Abstract
Photolithographic patterning of a xanthate precursor to poly(3,4-diphenyl-2,5-thienylene vinylene) is described. Unlike xanthate precursors to poly(p-phenylene vinylene), the thienylene vinylene analogue patterns as a positive tone resist. Characterization of irradiated films reveals photooxidative cleavage of the vinylene linker decreases the molecular weight of the polymer (increasing the solubility of the UV-exposed areas). As a result of the mechanism, the developed pattern sees no UV light exposure, which is a significant advantage compared with negative-tone-conjugated polymer resists. Single micron resolution of a low-bandgap polymer is achieved in an efficient and scalable process.
Published Version
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