Conformal Properties of InSbTe Thin Films Grown at a Low Temperature by MOCVD for PRAM Applications

Abstract

The feasibility of InSbTe chalcogenide materials prepared by metallorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below exhibited an amorphous structure, and the films grown at included various crystalline phases such as In–Sb–Te, In–Sb, In–Te, and Sb–Te. The composition of the amorphous films grown at was dependent on the working pressure. Films grown at exhibited a smooth morphology with a root-mean-square roughness of less than 1 nm, and the step coverage of the films grown on a trench structure with an aspect ratio of 5:1 was greater than 90%. An increase in deposition time increased the filling rate while retaining the conformal step coverage. Films grown at for 3 h in a working pressure of exhibited a reproducible and complete filling in a trench structure.