Abstract
GaAs and AlGaAs were deposited on silicon for the first time using conformal MOVPE growth, a lateral epitaxial overgrowth technique. Since this method requires selective growth, the chlorine-containing precursors dimethylgalliumchloride (DMGaCl) and dimethylaluminumchloride (DMAlCl) were used to prevent polycrystalline nucleations on the dielectric mask and the silicon substrate. The vapor pressures of these precursors have been determined. Several precursors for doping (hydrogen sulfide (H 2S), diethylzinc (DEZn), carbontetrabromide (CBr 4)) were tested together with the chlorine-containing precursors. Microphotoluminescence (μ-PL) and cathodoluminescence (CL) measurements were carried out on the conformal (Al)GaAs structures to determine the extension of the conformal layers. SEM pictures reveal the shape of the growth front.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
