Abstract
The application of the InGaAs/InGaP double-heterostructure laser increases the band offset between the cladding layer and the active layer more than the use of conventional InGaAsP/InP lasers. We propose InGaP lattice-mismatched liquid phase epitaxy on a GaAs substrate by the epitaxial lateral overgrowth (ELO) technique. To obtain the InGaP ( λ=820 nm) cladding layer of the InGaAs ( λ=1.3 μm)/InGaP DH laser, Ga liquid atomic fractions X Ga L were gradually reduced from those of the lattice-matching conditions. The InGaP lattice-mismatched growth on both the GaAs(1 0 0) and (1 1 1)B substrates were successfully carried out by adopting the ELO technique.
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