Abstract
Through-silicon-via (TSV) metallization is a key step in 3D interconnects. Cu electroplating has been the primarily focus for this application from the semiconductor industry. Electroless nickel has been developed as an alternative to Cu electroplating; however, because vias are quite deep, achieving good step coverage within the vias has presented a considerable challenge. This paper presents a new electroless process; that yields good step coverage performance.
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