Abstract
Ac surface photovoltage (SPV) disappears in p-type silicon (Si) wafers rinsed with an aluminum (Al)-contaminated RCA solution, while high ac SPV appears in n-type Si wafers. This is because large negative charge due to the metal impurity causes an accumulation region at the p-type wafer surface. The negative charge vanishes with the removal of the oxide. This means that Al resides in the native oxide.
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