Abstract
The concentration depth profile of aluminum (Al) in the thermally-grown silicon (Si) dioxide ( SiO2) is investigated in detail using high resolution inductively coupled plasma mass spectroscopy. A conceptual model is proposed where the Al segregated at the very top of the SiO2 creates a negative charge layer by forming an (AlOSi)- network, and a small amount of Al residing in the SiO2–Si interface gives some possibilities of forming interface traps. This interpretation is based on the results reported here and on previous results obtained from ac surface photovoltage measurements.
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