Abstract
The full-vectorial finite difference method with perfectly matched layer boundaries is used to identify the single-mode operation region of submicron rib waveguides fabricated using silicon-on-insulator material system. Achieving high-mode power confinement factors is emphasized while maintaining the single-mode operation. As opposed to the case of large cross-section rib waveguides, theoretical single-mode conditions have been demonstrated to hold for sub-micron waveguides with accuracy approaching 100%. Both the deeply and the shallowly etched rib waveguides are considered and the single-mode condition for the entire sub-micrometer range is presented while adhering to design specific-mode confinement requirements.
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