Confinement effects on quasi 0D dimensional structure with AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells

Abstract

In this work we study the effects of barrier height and position on symmetric AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells in absence of external influences. We use a variational method within the effective mass approximation to observe the effects on the structure. The donor trial function is taken as a product of the ground state wave function, with an arbitrary correlation function that depends only on ion-electron separation. It has been observed two peaks in the curves for the dependence of the ground-state binding energies versus the donor distance from the axis and it is shown that the impurity binding energy depends strongly on the impurity position, potential shape on both quantum wells.