Abstract
By considering cation interdiffusion only, we show that the confinement profile obtained after disordering a lattice-matched InGaAs/InP single quantum well differs from that of disordered AlGaAs/GaAs and InGaAs/GaAs quantum-well structures. An abrupt confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. In the early stages of disordering, a large strain buildup results. The bulk band gap of the disordered structure, together with the effects of this strain on the band gap, give rise to ‘‘miniwells’’ inside the potential wells.
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