Abstract
In this Letter, we describe a fabrication process for current injection into micrometer-size Ag/GaAs Tamm emitting diodes. It requires a special care to minimize surface damages as the Tamm mode is localized very close to the surface. Electroluminescence from GaAs quantum wells is demonstrated at room temperature, with a dispersion that follows the Tamm mode. For small diameters Tamm structures, in-plane confinement leads to electroluminescence into discretized energy modes. The observation of electrically excited emission from a confined diode is an important step toward the development of Tamm plasmon optical devices with new functionalities.
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