Abstract
We demonstrate that by changing the substrate temperature at which Ga droplets form and by varying the InAs deposition, we are able to control the configuration of quantum dots per GaAs mound. The size of the Ga droplets increases with increasing substrate temperature and resulting configurations show a very strong correlation with the size of initial GaAs islands. In distinction from previous reports, we attained two structures: quadmolecules and quantum rod pairs. Quadmolecules are elongated along the [011] crystallographic direction due to strain-driven processes and are directly formed at the edges of the GaAs mounds. On the other hand, quantum rod pairs formed along the [01−1] direction due to higher anisotropic diffusion.
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