Abstract
The difference in resistive switching characteristics by modifying the device configuration provides a unique operating principle, which is essential for both fundamental studies and the development of future memory devices. Here, we demonstrate the poly(methyl methacrylate) (PMMA)-based resistive switching characteristics using four different combinations of electrode/electrolyte arrangement in the device geometry. From the current–voltage (I–V) measurements, all the PMMA-based devices revealed nonvolatile memory behavior with a higher ON/OFF resistance ratio (∼105–107). Significantly, the current conduction in the filament and resistive switching behavior depend majorly on the presence of Al electrode and electrochemically active silver (Ag) element in the PMMA matrix. A trap-controlled space charge limited conduction (SCLC) mechanism constitutes the resistive switching in the Al/PMMA/Al device, whereas the current conduction governed by ohmic behavior influences the resistive switching in the Ag-including devices. The depth-profiling X-ray photoelectron spectroscopy (XPS) study evidences the conducting filament formation processes in the PMMA-based devices. These results with different conduction mechanisms provide further insights into the understanding of the resistive switching behavior in the polymer-based devices by simply rearranging the device configuration.
Highlights
IntroductionEasy tunable resistive switching characteristics in a metal– insulator–metal (MIM) structured device are key for the development of nonvolatile memories and for future atomic electronics.[1,2,3,4,5] In a MIM structured device, both organic (such as PEO, PVA, P3HT, etc.) and inorganic (such as Ta2O5, SiO2, ZnO, HfO2, etc.) materials serve as an ion conducting insulating dielectrics for resistive switching operation.[6,7,8,9,10,11,12,13] the resistive switching operation mainly depends on the con guration of the electrode and electrolyte.[14,15,16,17] It has been widely reported that the resistive switching in inorganicbased MIM devices arose by the valence change mechanism (VCM), in which the reduced oxygen atoms create oxygen vacancy sites in the dielectric interface for electron hopping between the electrodes during forward biasing, resulting in an ON state
A trap-controlled space charge limited conduction (SCLC) mechanism constitutes the resistive switching in the Al/poly(methyl methacrylate) (PMMA)/Al device, whereas the current conduction governed by ohmic behavior influences the resistive switching in the Ag-including devices
Application of positive bias enables low resistance state (LRS) from high resistance state (HRS) and the process is called as SET
Summary
Easy tunable resistive switching characteristics in a metal– insulator–metal (MIM) structured device are key for the development of nonvolatile memories and for future atomic electronics.[1,2,3,4,5] In a MIM structured device, both organic (such as PEO, PVA, P3HT, etc.) and inorganic (such as Ta2O5, SiO2, ZnO, HfO2, etc.) materials serve as an ion conducting insulating dielectrics for resistive switching operation.[6,7,8,9,10,11,12,13] the resistive switching operation mainly depends on the con guration of the electrode and electrolyte.[14,15,16,17] It has been widely reported that the resistive switching in inorganicbased MIM devices arose by the valence change mechanism (VCM), in which the reduced oxygen atoms create oxygen vacancy sites in the dielectric interface for electron hopping between the electrodes during forward biasing, resulting in an ON state. Application of reverse biasing dissolves the conducting bridge between the electrodes due to the recombination of oxygen ions and oxygen vacancies, enabling an OFF state.[18,19,20,21]. The organic polymer-based MIM devices operate mostly by the electrochemical metallization mechanism (ECM).[22,23] In ECM cells, the subsequent growth and annihilation of conducting metallic bridge by the electrochemically active elements (such as Ag or Cu) in the dielectric polymer interface can be responsible for the ON and OFF state during respective biasing conditions.[24,25,26] Incorporating electrochemically active elements either in electrode or electrolyte can mostly induce the lament growth and bistable resistive switching behavior. The lament growth occurs randomly as stochastic events that determines the resistive switching characteristics such as forming voltage, SET and RESET voltages, ON and OFF resistance values.[27,28] Signi cantly, the atomic constriction of thin lament results quantum transportation, where the lateral dimension of the conduction pathways are analogous to the Fermi wavelength.[29,30] The highly optimized device con guration and experimental measuring conditions are prime factors in uencing the atomic point contact in the conducting lament, in which the discrete quantized states (G0 1⁄4 2e2/h, where e is the charge of electron and h is Planck's constant) can be realized in MIM devices.[31,32,33,34] selecting an appropriate electrode and electrolyte material in the MIM device con guration plays crucial role in determining the lament formation and resistive switching property
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
