Abstract
AbstractIt was found that in low‐doped silicon crystals (2 × 1016 < N < 1017 cm–3) with compensation rate decrease (10–5 < K < 10–2) the experimental results differ from the theoretical ones. At low electric fields (E) this concerns the values of the activation energy (ε3) and the dependence of ε3 on N and K. The results are explained by the influence of neutral impurity interaction on the density of states. With increasing E a previously unknown conductivity (σM) appears. The dependence of σM on N, K, E, magnetic field (H), and temperature (T) is quite different from the dependence that is usual for σ3 conductivity. The results are explained by the appearance of conductivity via H?‐like states of impurities, which are concentrated in the vicinity of edge dislocations.
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