Abstract
This work presents the experimental evidence and impact of the conductivity modulation in the direct-bandgap GaN vertical PiN diode, by using pulse-mode and time-resolved characterizations as well as high-speed board-level switching tests. For the first time, the dependence of the forward transient behaviors in the vertical GaN PiN diode on time, current and temperature has been comprehensively investigated. The reduced ON-resistance ( ${R} _{ \mathrm{ON}}$ ) with longer ON-state time, at higher current level or higher temperature verifies the conductivity modulation in the vertical GaN PiN diode in transient/dynamic level. Thanks to the limited trapping effects and conductivity modulation, the vertical GaN PiN diode can deliver superior dynamic ${R}_{ \mathrm{ON}}$ performance after switching from high-voltage OFF state, showing great potential for high-power and high-efficiency power conversion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
