Abstract

In this work, we reveal the transient behavior of conductivity modulation and its dependence on conduction time (t ON ) and conduction current (I ON ) in vertical GaN-on-GaN PiN diode. By virtue of the photon-enhanced conductivity modulation, a negative dynamic ON-resistance (R ON ) is firstly demonstrated in the vertical GaN PiN diode which has been verified by high-speed board-level tests.

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