Abstract
We achieved the successful fabrication of Sn-doped α-Ga2O3 thin films with higher electron mobility and wider conductivity controls by improving the crystal quality. α-Ga2O3 films showed n-type conductivity with a maximum electron mobility of 24 cm2 V−1 s−1. The carrier concentration was successfully controlled in the range of 1017–1019 cm−3. Crystal defects such as dislocations severely compensate the free carriers in α-Ga2O3 films and restrict the mobility at low carrier concentrations. Therefore, to achieve further conductivity control and higher mobility, improving the crystallinity of α-Ga2O3 films is necessary.
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