Abstract

Chemically pure, stoichiometric cadmium sulphide (CdS) films were produced by the chemical bath deposition (CBD) method on suitably cleaned silicon (Si) wafer and indium–tin oxide (ITO) substrates at room temperature. The nanocrystalline film was found to be hexagonal in structure with the preferential orientation along the (0 0 2) plane. Variable-range hopping conduction through 66 nm thick CdS films on ITO substrates was found to be responsible at the low voltage while space charge-limited conduction became dominant at a relatively high bias voltage.

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