Abstract
The relationship between variable range hopping (VRH) below 300 K and the defects created during 10 13–10 16 cm −2 boron ion implantation at 77 K in as-implanted diamond films and films annealed at 800 °C is investigated with the help of electron spin resonance (ESR) and optical measurements. The onset D p = 2 × 10 15 cm −2 of the VRH conduction is attributed to a percolation threshold, and is lower than the amorphization dose D a = 4 × 10 15 cm −2. From ESR and optical absorption, implantation creates sp 3 carbon dangling bonds (paramagnetic and which act as hopping centres) below D p and sp 2 bonds (which cause metallic conduction and optical absorption) above D a . The hopping conduction takes place between localized levels from sp 3 carbon dangling bonds, but only a small proportion of the sp 3 defects participates in this conduction.
Published Version
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